Modeling electromagnetic immunity of LDO under ESD electromagnetic field coupling

Prediction and analysis of electromagnetic sensitivity of the microprocessor under the ESD electromagnetic field is studied. A test setup is designed for a low dropout linear regulator (LDO) voltage regulator and a SPICE model is set up to produce the ESD waveform. The characteristic of electromagnetic susceptibility of LDO was obtained by S parameter measurement and information specification within the frequency ranging from 1 MHz to 4 GHz. Finally, the model is built based on the above processing. The study applies LDO model to predict the conducted electromagnetic sensitivity, and compares predicted data and experimental data. The simulation result were good fit for the experimental data in the time domain. This model can effectively predict the response results of LDO surfing from ESD, providing a new method for modeling the electromagnetic compatibility.