Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

The optimal design of GaN-based Light-emitting diode (LED) is important for its reliability. In this work, a new three-Dimensional (3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting GaN-based LED grown on Si(111) substrate with different structures and electrode patterns. It consists of resistance of Transparent cond...