Formation and stability of intermetallics formed by solid-state reaction of Ni on In0.53Ga0.47As

InGaAs, as a channel material, is an attractive option in order to enhance CMOS performances and continue the downscaling of transistors. In order to make reliable InGaAs-based devices, many aspects must be studied. We have studied the silicide-like formation of contacts for the InGaAs's MOSFET's by solid-state reaction of Ni on InGaAs on InP substrates. Precise comprehension of the so-formed material according to annealing temperature is crucial to obtain the desirable quality, stability and low resistivity of the intermetallic.