High Performance High-K Metal-Gate Poly-Si TFTs with Subthreshold Swing < 200 mV/dec for Monolithic 3D Integrated Circuits Applications
The Japan Society of Applied Physics（2009）
Abstract
2009 International Conference on Solid State Devices and Materials,High Performance High-K Metal-Gate Poly-Si TFTs with Subthreshold Swing < 200 mV/dec for Monolithic 3D Integrated Circuits Applications
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Key words
High-Mobility Transistors,System Integration,Thin-Film Transistors
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