Ballistic Current Model for Graphene Nanoribbon Field-Effect Transistors

With the development of carbon based electronics devices, graphene nanoribbon field-effect transistors (GNRFETs) receive more and more interests due to its unique properties especially for high speed application. Kinds of experimental [1] and simulation work [2] have been done on the GNR FETs. However, there are few works [3][4] on modeling the I-V characteristics of GNRFETs especially for the compact model for circuit simulation. Based on the ballistic theory [5][6] of the nano transistors, we developed a quasi-analytical current model for intrinsic ballistic GNRFETs. The model is effective in a wide range of operation condition and variety of GNR width. The closed form expressions of the I-V model can be used in circuit simulator such as SPICE.