A Micropixel Avalanche Phototransistor For Time Of Flight Measurements
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT(2017)
摘要
This paper presents results of studies of the silicon based new micropixel avalanche phototransistor (MAPT). MAPT is a modification of well-known silicon photomultipliers (SiPMs) and differs since each photosensitive pixel of the MAPT operates in Geiger mode and comprises an individual micro-transistor operating in binary mode. This provides a high amplitude single photoelectron signal with significantly shorter rise time. The obtained results are compared with appropriate parameters of known SiPMs. (C) 2016 Published by Elsevier B.V.
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关键词
Micro-pixel avalanche photodiodes, MAPD, MAPT, Silicon photomultipliers, SiPMs
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