Re-examination of Performance and Reliability Degradation in MONOS Memory with Ultra-thin (~2nm) SiN Charge Trap LayersHaruka Kusai, M. Morota,Minoru Oda,Shosuke Fujii,Kiwamu Sakuma,Masato KoyamaThe Japan Society of Applied Physics（2011）引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
