Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide

This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the chan...