Interaction of oxygen and hydrogen implanted into silicon with high doses

Si samples implanted with O+ and/or H+ to high doses were studied by IR spectroscopy in conjunction with layer-by-layer etching. The transmission spectra of H-implanted samples show bands at 630, 890, and 2100 cm(-1), and the spectra of O-implanted samples exhibit bands at 450, 800, and 1100 cm(-1). Strong interaction between O, H, and Si in the samples implanted with O and then H ions was observed, leading to changes in the intensity of the major components of the 630-cm(-1) band and an increase in the intensity of the band at 890 cm(-1). The depth dependences of band intensities are different when the peaks in the O and H profiles coincide and when the maximum in the H profile is located deeper than that in the O profile.