10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)
2016 16th International Workshop on Junction Technology (IWJT)(2016)
摘要
In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9.5 nm and 10.7 nm with sheet resistances of 620 ohms/sq. and 414 ohms/sq., respectively. Additionally, by reducing knocked-on oxygen during ion implantation, the sheet resistance was decreased by 5 to 15%. The lowest sheet resistance was 235 ohms/sq. with a junction depth of 21.5 nm in the n+/p Ge. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices.
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关键词
shallow junctions,Ge junctions,ion implantation,flash lamp annealing,FLA,shallowest junction depths,knocked-on oxygen,sheet resistance,ultra-shallow n+-p junctions,p+-n junctions,monolithically-integrated Ge CMOS devices,size 10 nm,size 9.5 nm,size 10.7 nm,size 21.5 nm,Ge
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