Low temperature microwave annealed FinFETs with less Vth variability

Kazuhiko Endo, Y.-J Lee,Yoshie Ishikawa, F.-K. Hsueh,P.-J. Sung,Y. X. Liu,Takashi Matsukawa,S. O'uchi,Junichi Tsukada,Hiromi Yamauchi,M. Masahara

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2016）

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摘要

FinFETs with the low temperature microwave annealing process have been successfully fabricated and the superiority of the microwave annealing process has been precisely studied. For the first time, it is revealed that the microwave annealed FinFET exhibits less Vth variability and lower gate leakage.

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关键词

microwave annealed FinFET,voltage threshold variability,low temperature microwave annealing process,gate leakage

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