Warpage Structure of 4H-SiC after Implantation and Annealing Processes

The warpage structure of 4°-off-axis (0001) 4H-SiC samples after implantation and annealing processes was investigated using white light interferometry (WLI) and X-ray rocking curve (XRC) measurements. The WLI images showed that the surface warpage of the 300 °C-implanted/annealed SiC sample was small and almost the same as that of the un-implanted SiC sample, but the 30 and 150 °C-implanted/annealed SiC samples had a typically saddle-like warpage. The XRCs of the 0008-reflection were measured using monochromatic X-rays with different energies to change the X-ray penetration depth. The subtracted XRCs were reconstructed, and then the depth-dependence of the curvature radius of the 0008-reflection was evaluated. The results indicated that the saddle-like warpage of the 30 and 150 °C-implanted/annealed samples relaxed with increasing depth.