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Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

Shin Ichiro Kuroki,Hirofumi Nagatsuma,M. de Silva,Seiji Ishikawa,Tomonori Maeda,Hiroshi Sezaki,Takamaro Kikkawa,Takahiro Makino, Takeshi Ohshima,Mikael Östling,Carl-Mikael Zetterling

Materials Science Forum（2016）

Cited 11|Views6
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Abstract
Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were in ...
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radiation,h-sic,high-temperature,gamma-ray
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