Room temperature growth of ultrathin ordered MnGa films on a CoGa buffer layer
JAPANESE JOURNAL OF APPLIED PHYSICS(2016)
Abstract
Tetragonal ultrathin (1-5 nm) ordered MnGa films on a CsCl-type CoGa buffer layer were fabricated by a sputtering method. The (001)-CoGa layer was first deposited on a Cr-buffered MgO substrate and then annealed in-situ at 500 degrees C. The ultrathin MnGa film deposited on the CoGa buffer layer formed the L1(0) structure with very small roughness even when grown at room temperature. In addition, the films showed well-squared perpendicular magnetization hysteresis curves even when the film thickness was as little as 1 nm. The obtained results are important for the development of the MnGa-based spin-transfer torque devices for Gbit class magnetic random access memory and high frequency applications. (C) 2016 The Japan Society of Applied Physics
MoreTranslated text
Key words
mnga films,temperature growth
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined