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Fabrication and Properties of Thin-Film InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Transferred From Si (1 1 1) Substrate Onto a Thin Epoxy Resin Carrier

Qiang Liao,Yibin Yang,Weijie Chen,Xiaobiao Han,Jie Chen,Hui Luo,Jiali Lin,Yunling Qiu,Yinsong Chen,Jingting Wei,Zhisheng Wu,Iat-Neng Chan,Yang Liu,Baijun Zhang

Journal of Display Technology（2016）

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Abstract
Crack-free thin film InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) were successfully transferred from 2-in Si (1 1 1) growth substrate onto a thin epoxy resin carrier. The good chemical corrosion resistance of epoxy resin simplifies the protective processes during silicon substrate wet-chemical etching. The Raman spectra measurement shows an obvious relaxation of tensile strain aft...
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Key words
Light emitting diodes,Silicon,Substrates,Metals,Epoxy resins,Surface treatment,Electrodes
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