Current Conduction Mechanism of The Resistive Memory Device with Single-layered Dense ZnO Nanorod Arrays

A multi-level resistive memory device based on the single-layered dense Zn O nanorod arrays was prepared. The mechanisms of current conduction and resistive switching were studied by IV curve and bias dependence of fluorescence spectra. The dominant conduction mechanisms for the two resistance states are concluded to be Ohmic conduction and space-charge-limited-current( SCLC) conduction,respectively. It is considered that the oxygen vacancies density at the surface depletion region of nanorods is influenced by charge loss in defects of V0 and V+. The increased oxygen vacancies density under forward bias is obtained to build the conductive paths for the electron transportation,resulting in the switching from the high resistance state to the low resistance state.The high resistance state is re-obtained with the paths broken off under reverse voltage.