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n沟VDMOSFET单粒子烧毁的二维数值模拟

郭红霞,陈雨生,张义门,王伟,赵金龙,周辉

Nuclear Electronics and Detection Technology（2004）

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Abstract
应用半导体器件二维模拟软件Medici对功率MOSFET器件单粒子烧毁SEB(Single Event Burnout)效应开展了理论模拟研究.理论模拟与以往的实验结果比较吻合,证明采取的物理模型的正确性.得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系,提出了改善SEB的几种加固措施.该模型对于评估器件SEB效应提供了理论方法.
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Key words
single event burnout,numerical simulation,two-dimensional,n-channel
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