ELECTRONIC STRUCTURE OF Mn/GaAs(100) STUDIEDBY SPECTRA OF ELECTRON PHOTOEMISSIONWITH SYNCHROTRON RADIATION

The electronic structure of the ultra-thin Mn overlayer on GaAs(100) is studied by spectra of electron photoemission with synchrotron radiation. It is found that the valence band spectra of the Mn overlayer at θ2ML are quite different from that of bulk α-Mn. The similarity between them starts to show up as θ2ML. The results can be well explained by the exchange splitting between the spin up and spin down bands of the Mn3d electrons. It is concluded that the magnetic ordering is established in the ultra thin Mn overlayer on GaAs(100) at θ2ML.