Mechanism Analysis of Gate Leakage Current Degradation of GaAs MESFETs
Electronic Product Reliability and Environmental Testing(2000)
Abstract
Forward and Reverse Gate-Grain Leakage Current of GaAs MESFETs increase after High Temperature Storage Test (HTST) .In order to study the failure mechanisms an experiment to measure the low-biased forward current of Gate-Grain diode as a function of temperature has been carried out.The change of density of Combination-Generation Centers(C-G C)after HTST has been estimated qualitatively. The increase of the both leakage currents is due to the increase of C-G C in the active layer under the gate An evidence of gate metal sinking and metal-semiconducion after HTST has been obtained.
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Key words
Metal Gate Transistors,Double-Gate Transistors
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