Behavior of irradiation donor (ID) after annealing in neutron transmutation doping Czochralski grown silicon

Behavior of the irradiation donor(ID) after annealing in NTDCZSi has been studied by using various kinds of experimental means and the effect of neutron doses and oxygen concentration on the formation of ID is discussed. The donor plateau generated in heat treatment below 750℃is reported for the first time. The results show that ID produces a shallow donor energy level (- 43meV) in the forbidden band. Its electric activity originates from the interface state of Si/SiOz precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon.