GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.

This study investigated GaN epitaxial layer growth with a conductive AlxGa1-xN buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the AlxGa1-xN buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the AlxGa1-xN buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the AlxGa1-xN buffer layer.