On the Sensitivity of Electron-Injection Detectors at Low Light Level

We present the signal-to-noise performance of a short-wave infrared detector, which offers an internal avalanche-free gain. The detector is based on a similar mechanism as the heterojunction phototransistor and takes advantage of a type-II band alignment. Current devices demonstrate a noise-equivalent sensitivity of ~670 photons at 260 K and over a linear dynamic range of 20 dB. While this level o...