Numerical Simulation of Copper Migration in Single Crystal CdTe

IEEE Journal of Photovoltaics(2016)

Cited 12|Views17
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Abstract
Absorber material with high and stable p-type doping that does not impede free carrier lifetime is the key component enabling efficiency and stability improvements in thin-film CdTe technology. To better understand the compensation mechanism and the metastable effects related to Cu acceptors, the most common p-type dopant in CdTe, i.e., a detailed kinetic model describing the behavior of intrinsic...
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Key words
II-VI semiconductor materials,Cadmium compounds,Annealing,Mathematical model,Semiconductor process modeling,Photovoltaic systems
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