Study of Random Telegraph Noise in UTBOX Silicon-on-Insulator Nmosfets

This paper reports on the behavior of Random Telegraph Signals (RTSs) in ultra-thin buried oxide (UTBOX) Silicon-on-Insulator (SOI) nMOSFETs. Emphasis is on the amplitude ΔI D , which is studied in function of the front-gate, the back-gate and the drain bias. As will be shown, a careful analysis of the drain-to-source bias-dependence in forward and reverse operation enables to determine the lateral trap position in the channel. Combined with the back-gate voltage dependence, it is concluded that the Generation-Recombination (GR) centers responsible for the RTS are in the silicon film rather than in the gate oxide.