Dual-Color InGaN/GaN Pyramidal Micro Light-Emitting Diode Selectively Grown on SiO $_{2}$ Masked Si Substrate

Dual-color InGaN/GaN pyramidal micro light-emitting diode ( μ-LED) was directly grown on SiO2 masked Si substrate via selective area growth technology. An electrically driven dual-color μ-LED with typical rectifying behavior and a turn-on voltage of about 3 V was demonstrated. Two emission peaks locating at 440 and 490 nm were observed by micro-photoluminescence. Using catholuminescence measuremen...