A High-Speed Photodetector For Telecom, Ethernet, And Ftth Applications In Zero-Change Cmos Process

A. H. Atabaki, H. Meng,L. Alloatti,R. J. Ram

2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)（2016）

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摘要

A high-speed photodetector based on absorption by the defect states in transistor gate polysilicon is demonstrated with 0.14-0.2 A/W responsively in 1310-1610 nm and 10 GHz bandwidth in an unmodified 45 nm SOI CMOS process.

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关键词

high-speed photodetector,telecom,Ethernet,FTTH,fiber-to-the-home,zero-change CMOS process,defect states,transistor gate polysilicon,SOI CMOS process,wavelength 1310 nm to 1610 nm,Si

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