Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer
Superlattices and Microstructures(2016)
Abstract
We investigate a novel near-ultraviolet light-emitting diode (NUV-LED) with a p-type AlGaN (pAlGaN) hole injection layer to replace the conventional p-type GaN layer. The optical properties are studied numerically with simulations. Our calculated results indicate that a pAlGaN layer can significantly improve both light output power and internal quantum efficiency of a NUV-LED. The light power of NUV-LED with constant and gradually increasing Al content of the pAlGaN layer increases by 215% and 266% compared to a conventional LED. We also find that the elimination of the interface barrier and suppression of the polarization field are the key factors that lead to the improved NUV-LED performance.
MoreTranslated text
Key words
p-type AlGaN,Hole injection layer,Near-ultraviolet light-emitting diode,Internal quantum efficiency
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined