Tid Response Of Various Field Programmable Gate Arrays And Memory Devices

J. M. Armani,J. L. Leray,R. Gaillard, V. Iluta

2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2015）

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摘要

The Total Ionizing Dose (TID) tolerance of some FPGAs and memory devices has been evaluated. Two FPGAs and five memories of various types and technologies have been irradiated. Results show that the total dose tolerance of the tested FPGAs is around 200 Gy. The SRAM is the most tolerant device with a failure dose level over 2.4 kGy. Two Flash memories were still well-functioning after 1 kGy.

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关键词

CMOS, Field Programmable Gate Array, Flash, MRAM, SRAM, Total Ionizing Dose

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