High-Performance Ultraviolet 385-nm GaN-Based LEDs With Embedded Nanoscale Air Voids Produced Through Atomic Layer Deposition and Al 2 O 3 Passivation
IEEE Electron Device Letters(2016)
摘要
This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as int...
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关键词
Light emitting diodes,Gallium nitride,Nanoscale devices,Aluminum oxide,Passivation,Strain,Power generation
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