Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Tsung-Ming Tsai,Kuan-Chang Chang,Ting-Chang Chang,Rui Zhang, Tong Wang,Chih-Hung Pan,Kai-Huang Chen,Hua-Mao Chen,Min-Chen Chen,Yi-Ting Tseng,Po-Hsun Chen,Ikai Lo,Jin-Cheng Zheng,Jen-Chung Lou,Simon M. Sze

IEEE Electron Device Letters（2016）

Cited 39|Views34

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Abstract

This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electr...

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Key words

Indium tin oxide,Switches,Electrodes,Resistance,Tin,Fitting,Random access memory

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