Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance
JAPANESE JOURNAL OF APPLIED PHYSICS(2016)
摘要
In this paper, we present a newly developed 1200-V-class 4H-SiC implantation-and-epitaxial trench metal-oxide-semiconductor field-effect transistor (IETMOSFET). It uses high-quality p- and n-epitaxial layers for a channel and a trench current spreading layer (TCSL), respectively. It can enhance both channel mobility and bulk mobility for current spreading by avoiding damage and impurity variations caused by ion implantation. The ion implantation and epitaxial techniques developed for existing ion-implantation-and-epitaxial MOSFETs (IEMOSFETs) are herein utilized to protect the trench bottom and a relatively low-doped epitaxial channel layer with high mobility. By optimizing the geometry of p-base regions under a gate trench structure, we obtain a low specific on-resistance (R(ON)A) of 1.8 m Omega cm(2) with a breakdown voltage (BVDSS) above 1200 V. (C) 2016 The Japan Society of Applied Physics
更多查看译文
关键词
Metal Gate Transistors
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要