Replacement Metal Gate Resistance In Finfet Architecture Modelling, Validation And Extendibility

Ruqiang Bao,Brian J. Greene,Unoh Kwon,Sungjae Lee,John Bruley, Weike Wang,Kai Zhao,Patrick W. DeHaven,Zhengwen Li,Keith Kwong Hon Wong,Stephan Grunow,Rama Divakaruni,Chung-hsun Lin,Siddarth Krishnan,Vijay Narayanan

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

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摘要

In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W electrode. Our multiplicative model predicts that TiN fill offers the lower gate resistance than TiN/W fill for highly scaled gate lengths. By absorbing the results from our model into the real RMG FinFET devices, we observe that TiN fill provides similar to 6.4 % performance improvement compared to TiN/W fill. Meanwhile, the employment of gate conductance for gate stack film thickness monitoring is also described in our work.

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关键词

replacement metal gate resistance,FinFET architecture modelling,FinFET architecture validation,FinFET architecture extendibility,multiplicative model,tungsten film resistivity,tungsten electrode,highly-scaled gate length,RMG FinFET devices,gate conductance employment,gate stack film thickness monitoring,TiN-W

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