Charge Transport in Deep and Shallow States in a High-Mobility Polymer FET

Seohee Kim,Tae Jun Ha,Prashant Sonar,Ananth Dodabalapur

IEEE Transactions on Electron Devices（2016）

引用 11|浏览4

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摘要

Polymer FETs generally have a wide subthreshold regime due to a lot of disorder, mainly originated from domain/grain boundaries. Deep state's charge transport of polymer transistors has not been investigated due to the difficulty in determining the field-effect mobility in the subthreshold region. In this paper, the features of the charge transport in deep and shallow states of polymer transistors...

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关键词

Field effect transistors,Polymers,Logic gates,Mathematical model,Charge carrier density,Threshold voltage

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