Study of TFET Non-Ideality Effects for Determination of Geometry and Defect Density Requirements for Sub-60Mv/dec Ge TFET
2015 IEEE International Electron Devices Meeting (IEDM)（2015）
关键词
TFET nonideality effects,geometry,defect density,tunneling field effect transistor,multitemperature characterization,PIN diodes,bulk properties,interface effects,trap-assisted-tunneling,current component segmentation,Ge
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