Nvm Neuromorphic Core With 64k-Cell (256-By-256) Phase Change Memory Synaptic Array With On-Chip Neuron Circuits For Continuous In-Situ Learning

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2015)

引用 183|浏览59
暂无评分
摘要
We demonstrate a neuromorphic core with 64k-cell phase change memory (PCM) synaptic array (256 axons by 256 dendrites) with in-situ learning capability. 256 configurable on-chip neuron circuits perform leaky integrate and fire (LIF) and synaptic weight update based on spike-timing dependent plasticity (STDP). 2T-1R PCM unit cell design separates LIF and STDP learning paths, minimizing neuron circuit size. The circuit implementation of STDP learning algorithm along with 2T-1R structure enables both LIF and STDP learning to operate asynchronously and simultaneously within the array, avoiding additional complication and power consumption associated with timing schemes. We show hardware demonstration of in-situ learning with large representational capacity, enabled by large array size and analog synaptic weights of PCM cells.
更多
查看译文
关键词
NVM neuromorphic core,phase change memory synaptic array,on-chip neuron circuit,continuous in-situ learning,leaky integrate and fire,LIF,synaptic weight update,spike-timing dependent plasticity,2T-1R PCM unit cell design,STDP learning algorithm,power consumption,timing scheme
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要