Recent progress in MOCVD growth for thermoelectrically cooled HgCdTe medium wavelength infrared photodetectors

W. Gawron,P. Martyniuk,A. Kębłowski,K. Kolwas,D. Stępień,J. Piotrowski,P. Madejczyk, M. Pędzińska,A. Rogalski

Solid-State Electronics（2016）

Cited 7|Views1

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Abstract

•We presented the mid-wave HgCdTe MOCVD growth procedure on GaAs substrate with CdTe buffer layer.•Hg/Te and Cd/Te mole ratios were provided for mid-wave HgCdTe growth procedure.•Temperature profile of the growth process was provided.•Hillocks were not observed in areas over 60×60μm2.•TAT mechanism was suppressed at the N+-absorber interface – the MWIR detectors made of the grown epi-layers.

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Key words

HgCdTe IR detectors,HgCdTe MOCVD growth,Auger suppressed IR detectors

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