Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms(2016)
Abstract
•We study the electronic degradation of semiconductors induced by ion irradiation.•The experimental protocol is based on MeV ion microbeam irradiation.•The radiation induced damage is measured by IBIC.•The general model fits the experimental data in the low level damage regime.•Key parameters relevant to the intrinsic radiation hardness are extracted.
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Key words
DIB,PIB,IBIC,NIEL,CCE
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