Ga2o3 Nanowire Photodetector Prepared On Sio2/Si Template

The authors report the growth of beta-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. beta-Ga2O3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 degrees C is 3.43 x 10(-3) A/W.