A new sharp switch device integrated in 28 nm FD-SOI technology

Thomas Bédécarrats,Claire Fenouillet-Béranger,Sorin Cristoloveanu,Philippe Galy

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2018）

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摘要

A novel 2-components sharp switch device integrated in high-k metal gate UTBB 28 nm FD-SOI technology is presented, analyzed and measured in DC. It features a subthreshold slope of 2 mV/decade and offers several parameters to tune its characteristic, for ESD or neuromorphic applications.

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关键词

BiCMOS integrated circuits,Switches,MOS devices,Logic gates,Ions,Threshold voltage,Temperature measurement

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