Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe

J. D. Benson, L. O. Bubulac, A. Wang,R. N. Jacobs,J. M. Arias, M. Jaime-Vasquez, P. J. Smith,L. A. Almeida,A. Stoltz,P. S. Wijewarnasuriya, A. Yulius,M. Carmody,M. Reddy,J. Peterson,S. M. Johnson,J. Bangs, D. D. Lofgreen

Journal of Electronic Materials(2018)

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摘要
In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot’ macro-defects can have Cu concentrations > 1 × 10 18 cm −3 . Focused ion beam scanning transmission electron microscopy analysis of four ‘hot spots’ was performed. The origin of ‘hot spot’ defects is unresolved—however, our analysis has shown ‘hot spots’ can arise due to molecular beam epitaxy spit defects and CdZnTe substrate defects. The estimated ‘hot spot’ density is ∼ 30 cm −2 . The presence of impurity ‘hot spot’ macro-defects in HgCdTe/CdZnTe is confirming evidence for the occurrence of L. Bubulac’s impurity ‘pipe’ mechanism.
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关键词
CdZnTe substrate,HgCdTe,molecular beam epitaxy,macro-defects,impurity contamination
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