A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam
Instruments and Experimental Techniques(2018)
Abstract
The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector.
MoreTranslated text
Key words
sic detectors,radiation hardness
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined