Enhancing oxidation rate of 4H–SiC by oxygen ion implantation

In this study, the thermal oxidation rate of oxygen ion (O + ) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field ( E breakdown ) and capacitance–voltage (CV) curve of the grown oxide (SiO 2 ) film were also evaluated. It is found that the thermal SiO 2 growth rate on 4H–SiC (0001) face was significantly improved by O + implantation. E breakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO 2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO 2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.