Highly efficient injection microdisk lasers based on quantum well-dots.

We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metal-organic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential efficiency of about 31%, and a peak electrical-to-optical power conversion efficiency of 15% in a 31 mu m diameter microdisk laser. The continuous-wave lasing is observed up to 110 degrees C. (C) 2018 Optical Society of America