Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits.

PHYSICAL REVIEW LETTERS(2018)

引用 97|浏览49
暂无评分
摘要
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
更多
查看译文
关键词
charge noise,silicon,spin,lifetime
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要