Ultrathin (Bi1-Xsx)(2)Se-3 Field Effect Transistor With Large On/Off Ratio
ACS applied materials & interfaces(2017)
Abstract
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1-xSbx)(2)Se-3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of similar to 25 000% could 4 be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
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Key words
(B1-xSbx)(2)Se-3, ultrathin, topological insulator, field effect transistor, SrTiO3
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