Giant Rashba Splitting In Pb1-Xsnxte (111) Topological Crystalline Insulator Films Controlled By Bi Doping In The Bulk

Valentine V. Volobuev,Partha S. Mandal,Marta Galicka,Ondrej Caha,Jaime Sanchez-Barriga,Domenico Di Sante,Andrei Varykhalov,Amir Khiar,Silvia Picozzi,Guenther Bauer,Perla Kacman,Ryszard Buczko,Oliver Rader,Gunther Springholz

ADVANCED MATERIALS（2017）

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摘要

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.

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关键词

IV-VI semiconductors,Rashba effect,crystalline insulators,molecular beam epitaxy,photoemission spectroscopy

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