Cluster tool for in situ processing and comprehensive characteriza tion of thin films at high temperatures.

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 degrees C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (similar to 60 nm)/Ag (similar to 30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 degrees C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.