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Characterization of Atomic Layer Deposited Low-K Spacer for Fdsoi High-K Metal Gate Transistor

D. H. Triyoso,G. R. Mulfinger,K. Hempel, H. Tao,F. Koehler,L. Kang, A. Kumar,T. McArdle,J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen,J. Kluth,R. Carter

2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)（2017）

引用 1|浏览15
关键词
FDSOI,high-k metal gate,low-k spacer,SiBCN,SiOCN,CMOS scaling
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