Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment

We demonstrate the extra influence of a nitrogen buffering effect in the top indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) with an NH ₃ treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar current-voltage (I-V) characteristics compared to the ITO/Hf:SiO ₂ /TiN control structure RRAM. However, the effect in the ITO electrode layer, makes it easier for the redox reaction to occur, leading to improved endurance and concentrated voltages.