Polymer–electrolyte-gated nanowire synaptic transistors for neuromorphic applications

Polymer–electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO 2 ) nanowire synaptic transistors using polymer–electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO 4 ) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer–electrolyte/SnO 2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO 2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO 2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.